IR062HD4C10U-P2의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
| IR062HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE
Preliminary Data Sheet No. PD60171-D
IR062HD4C10U-P2 IR082HD4C10U-P2
HIGH VOLTAGE HALF BRIDGE
Features
Output Power IGBT’s in half-bridge configuration 575V rated breakdown voltage High side gate drive designed for bootstrap
operation
Product Summary
VIN (max) PD (TA = 25°C) VCE(ON) typ 5 PDF 다운로드  International Rectifier |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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IR01H214 (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE Data Sheet No. PD-6.075-G
IR01H(D)214 , IR01H(D)214-P2 IR01H(D)224 , IR01H(D)224-P2 IR01H(D)420 , IR01H(D)420-P2 HIGH VOLTAGE HALF BRIDGE
Features
Output Power MOSFETs in half-bridge configuration 500V rated breakdown voltage High side gate drive designed for bootstrap
operation Matched International Rectifier  |
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IR01H224 (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE Data Sheet No. PD-6.075-G
IR01H(D)214 , IR01H(D)214-P2 IR01H(D)224 , IR01H(D)224-P2 IR01H(D)420 , IR01H(D)420-P2 HIGH VOLTAGE HALF BRIDGE
Features
Output Power MOSFETs in half-bridge configuration 500V rated breakdown voltage High side gate drive designed for bootstrap
operation Matched International Rectifier |
|
IR01H420 (IR01H(D)xxx) HIGH VOLTAGE HALF BRIDGE Data Sheet No. PD-6.075-G
IR01H(D)214 , IR01H(D)214-P2 IR01H(D)224 , IR01H(D)224-P2 IR01H(D)420 , IR01H(D)420-P2 HIGH VOLTAGE HALF BRIDGE
Features
Output Power MOSFETs in half-bridge configuration 500V rated breakdown voltage High side gate drive designed for bootstrap
operation Matched International Rectifier |
|
IR02H420 HIGH VOLTAGE HALF-BRIDGE Data Sheet No. PD-6.076
IR02H420
HIGH VOLTAGE HALF-BRIDGE
Features
n Output Power MOSFETs in half-bridge configuration n 500V Rated Breakdown Voltage n High side gate drive designed for bootstrap operation n Matched propagation delay for both channels n Independent high and low side output channels International Rectifier |
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IR03H420 HIGH VOLTAGE HALF-BRIDGE
Data Sheet No. PD-6.077
IR03H420
HIGH VOLTAGE HALF-BRIDGE
Features Product Summary
VIN (max) ton, off trr RDS(on) PD (TA = 25 ºC) 500V 130 ns 270 ns 3.0Ω 2.0W
n Output Power MOSFETs in half-bridge configuration n 500V Rated Breakdown Voltage n High side gate drive designed for bootstrap opera International Rectifier |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |