IRFZ44N의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
IRFZ44N 55V, 49A, HEXFET Power MOSFET PD - 94053
IRFZ44N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 17.5mΩ
G S
ID = 49A
Description
Advanced HEXFET® Power MOSFETs from Intern International Rectifier |
IRFZ44N 49A, 55V, N-channel Enhancement Mode TrenchMOS Transistor
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has NXP Semiconductors |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
IRF034 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) PD - 90585
REPETITIVE A V ALANCHE AND dv, dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA, AE)
Product Summary
Part Number IRF034
IRF034 60V, N-CHANNEL
BVDSS RDS(on) 60V 0.050Ω
ID 25Α
The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transist International Rectifier |
IRF044 N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF044
DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.028Ω(Max) ·Simple Drive Requirements
APPLICATIONS ·Switching power sup Inchange Semiconductor |
IRF044 N-CHANNEL POWER MOSFET IRF044
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
HERMETICALLY SEALED TO 3 METAL PACKAGE
7.87 (0.310) 6.99 (0.275)
1
20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 Seme LAB |
IRF044 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE
PD - 90584
REPETITIVE A V ALANCHE AND dv, dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA, AE)
Product Summary
Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α
IRF044 60V, N-CHANNEL
The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transist International Rectifier |
IRF044SMD N-CHANNEL POWER MOSFET LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
IRF044SMD
N CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 ) M a x .
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
1
3
0 .7 6 (0 .0 3 0 ) m in .
VDSS ID(con Seme LAB |
국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |