K2350 가격 및 재고 조회

2SK2350 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L π MOSV) 2 2SK2350 Switching Regulator, DC DC Converter and Motor Drive Applications - 4-V gate drive - Low drain source ON resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 0.2

Power F-MOS FETs 2SK758 2SK2324(Tentative) Silicon N-Channel Power F-MOS s Features q Avalanche Unit : mm 4.6±0.2 ø3.2±0.1 9.9±0.3 2.9±0.2 energy capability guaranteed switching q High-speed q Low q No ON-resistance 15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 secondary breakdown s Ap

Date:- 18th January, 2016 Data Sheet Issue:- P1 Medium Voltage Thyristor Types K2325TJ600 & K2325TJ650 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltage, (note 1

Date:- 18th January, 2016 Data Sheet Issue:- P1 Medium Voltage Thyristor Types K2325TJ600 & K2325TJ650 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltage, (note 1

SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type ( F6F70HVX2 ) 700V 6A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power

2SK2334(L), 2SK2334(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings O