K2750 가격 및 재고 조회

2SK2750 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2750 Chopper Regulator, DC DC Converter and Motor Drive Applications - Low drain source ON resistance - High forward transfer admittance : RDS (ON) = 1.7 Ω (typ.) : |Yfs| = 3.0 S (typ.) Unit: mm - Low leakage current

Transistors Switching (500V, 2A) 2SK2715 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dim

2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2717 DC DC Converter and Motor Drive Applications Unit: mm l Low drain source ON resistance : RDS (ON) = 2.3 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.4 S (typ.) l Low leakage current : IDSS = 100

2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2718 DC DC Converter and Motor Drive Applications - Low drain source ON resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 5.6 Ω (typ.) : |Yfs| = 2.0 S (typ.) Unit: m

2SK2719 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2719 Chopper Regulator, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100

DATA SHEET MOS Field Effect Power Transistors 2SK2723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS (in millimeter) 10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications