K2900-01의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
| K2900-01 N-channel MOS-FET > Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MOS-FET
60V 14,5mΩ ±45A 60W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings   Fuji Electric |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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K2917 MOSFET ( Transistor ) - 2SK2917 2SK2917
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV)
2SK2917
Chopper Regulator, DC DC Converter and Motor Drive Applications
- Low drain source ON resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 0.21 Ω (typ.) : |Yfs| = 17  Toshiba Semiconductor  |
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K2926 MOSFET ( Transistor ) - 2SK2926 2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.042Ω typ.
4V gate drive devices. High speed switching
Outline
DPAK 2
D
G
S
44
12 3
12 3
1. Gate 2. Drain 3. Source 4. Drain
ADE-208-535 1st. Edition
2SK2926(L), 2SK2926(S)
A  Hitachi Semiconductor |
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K2929 MOSFET ( Transistor ) - 2SK2929 2SK2929
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-552C (Z) 4th. Edition Jun 1998 Features
Low on-resistance R DS =0.026 Ω typ. High speed switching 4V gate drive device can be driven from 5V source
Outline
TO 220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange 3. Source
2SK2929 Hitachi Semiconductor |
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K2930 MOSFET ( Transistor ) - 2SK2930 2SK2930
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-553C (Z) 4th. Edition Jun 1998 Features
Low on-resistance R DS =0.020 Ω typ. High speed switching 4V gate drive device can be driven from 5V source
Outline
TO 220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange 3. Source
2SK2930 Hitachi Semiconductor |
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K2933 60V / 15A / N Channel MOSFET 2SK2930
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-553C (Z) 4th. Edition Jun 1998 Features
Low on-resistance R DS =0.020 Ω typ. High speed switching 4V gate drive device can be driven from 5V source
Outline
TO 220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange 3. Source
2SK2930  Renesas |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |