K320 가격 및 재고 조회

Date:- 15 Nov, 2013 Data Sheet Issue:- 1 Medium Voltage Thyristor Type K3207EC450 to K3207EC520 Development Type No. Kx142EC450-520 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive p

Date:- 15 Nov, 2013 Data Sheet Issue:- 1 Medium Voltage Thyristor Type K3207EC450 to K3207EC520 Development Type No. Kx142EC450-520 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive p

2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features Low on-resistance R DS =35mΩ typ. High speed switching 4V gate drive device can be driven from 5V source Outline TO 220FM D G 1 2 S 1. Gate 2. Drain 3. Sour

2SK3216-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and chara

2SK3228 Silicon N Channel MOS FET High Speed Power Switching ADE-208-765A(Z) Target specification 2nd. Edition December 1998 Features Low on-resistance R DS(on) =6mΩ typ. Low drive current 4V gate drive device can be driven from 5V source Outline TO 220AB D G 1 2 S 3 1. Gate 2. Drain(Flan

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i