K330 가격 및 재고 조회

LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 Conserves battery life Unique manufacturing process Provides lowest reverse leakage currents Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE V- @ I- = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9

2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3302 Switching Regulator and DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 �

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3306 PACKAGE Isolated TO-220 (MP-45F) DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics,

2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3310 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V

2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3313 Chopper Regulator, DC DC Converter Applications Motor Drive Applications l Fast reverse recovery time l Low drain source ON resistance l High forward transfer admittance l Low leakage current l Enhancement mode : t

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2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3316 Switching Regulator Applications - Fast reverse recovery time - Low drain source ON resistance - High forward transfer admittance - Low leakage current - Enhancement mode : trr = 60 ns (typ.) : RDS (ON) = 1.6 Ω