K3306 가격 및 재고 조회

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3306 PACKAGE Isolated TO-220 (MP-45F) DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics,

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3306 PACKAGE Isolated TO-220 (MP-45F) DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics,

2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3310 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V

2SK3313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3313 Chopper Regulator, DC DC Converter Applications Motor Drive Applications l Fast reverse recovery time l Low drain source ON resistance l High forward transfer admittance l Low leakage current l Enhancement mode : t

w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c

2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3316 Switching Regulator Applications - Fast reverse recovery time - Low drain source ON resistance - High forward transfer admittance - Low leakage current - Enhancement mode : trr = 60 ns (typ.) : RDS (ON) = 1.6 Ω