K3767 가격 및 재고 조회

2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mod

Ordering number : ENN7806A 2SK3704 2SK3704 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC , DC Converter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source

Ordering number : ENN7766 2SK3706 2SK3706 Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Motor driver, DC , DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to

Ordering number : ENN8023 2SK3709 2SK3709 Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Motor driver, DC , DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-

60V N -ch MOSFET 2SK3711 December 2005 ■Features Low on-resistance Built-in gate protection diode Avalanche energy capability guaranteed ■Package TO3P ■Applications Electric power steering High current switching ■Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (T

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3713 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications. ORDERING INFORMATION PART NUMBER 2SK3713-SK PACKAGE TO-262 FEATURES Super high VG