K4106의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
| K4106 MOSFET ( Transistor ) - 2SK4106 2SK4106
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4106
Switching Regulator Applications
Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V   Toshiba |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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K4107 MOSFET ( Transistor ) - 2SK4107 2SK4107
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4107
○ Switching Regulator Applications
Low drain source ON resistance Low leakage current Enhancement mode : RDS (ON) = 0. 33 Ω (typ.) Unit: mm
High forward transfer admittance : |Yfs| = 8.5 S (typ.) : IDSS =  Toshiba Semiconductor  |
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K4108 MOSFET ( Transistor ) - 2SK4108 2SK4108
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
- Low drain source ON resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 0. 21Ω (typ.) : |Yfs| = 14 S (typ.) Unit: mm
: IDSS = Toshiba Semiconductor |
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K4110 MOSFET ( Transistor ) - 2SK4110 2SK4110
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4110
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement m Toshiba |
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K4111 MOSFET ( Transistor ) - 2SK4111 2SK4111
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4111
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 Toshiba |
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K4112 Field Effect Transistor 2SK4112
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4112
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: V Toshiba |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |