MA02203AD-R13 가격 및 재고 조회

3.6 V, 450 mW DECT RF Power Amplifier IC V 1.0 MA02203AD Features § Ideal for DECT Applications § +26.5 dBm Output Power § 24.5 dB Power Gain § Single Positive Supply § Class A Bias § No External RF Matching Required Functional Schematic N, C +VDD1 GND GND RF IN GND GND N, C +VDD2 GND GND

笙泉科技股 有限公司 Megawin Technology Co., Ltd. Version: 2.00 MA015 Data Sheet 8-Bit Micro-Controller with IR function This document information is the intellectual property of Megawin Technology. Megawin Technology Co., Ltd. 2011 All right reserved. QP-7300-03D 1, 29 Version 2.00

MA01502D Limiter, Low Noise Amplifier Die (8.5 - 12.0 GHz) FEATURES 8.5 to 12 GH- Operation 10W CW Power Handling Capability 50Ω Input Impedance Preliminary Release Balanced Two Stage LNA with Limiter Excellent Return Loss Self-Aligned MSAG® MESFET Process DESCRIPTION The MA01502D is

MA01503D Limiter, Low Noise Amplifier Die (8.5 - 12.0 GHz) FEATURES 8.5 to 12.0 GH- Operation 10W CW Power Handling Capability 50Ω Input Impedance Preliminary Release Balanced Three Stage LNA with Limiter Excellent Return Loss Self-Aligned MSAG® MESFET Process DESCRIPTION The MA01503D

MA02104AF 3.6V 1.2W RF Power Amplifier IC for N-PCS, ISM900 Applications Two-Way Paging Wireless Modems Cordless Telephones Telemetry 900 MH- ISM Features = = = = = = = = Single Positive Supply 16 Pin TSSOP Plastic Package Class AB Bias 800 - 1000 MH- Operation 50Ω Input Impedance Sing

3.4 V, 1.2 W RF Power Amplifier IC V 1.0 MA02107AF Features § Ideal for Pager Applications § +30.8 dBm Output Power § 30.8 dB Power Gain § Single Positive Supply § Class AB Bias § 50 Ohm Input Impedance § Single Capacitor Output Match Functional Schematic V DD1 N, C GND GND RF IN GND GND N