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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650, D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MH- 12.5 Volt Characteristics

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10005, D Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GH- frequency range at high overall duty cycles. Guaranteed Per

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1000MB, D The RF Line Microwave Pulse Power Transistors Designed for Class A and AB common emitter amplifier applications in the low power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 V

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF1001A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-39 packaged VHF, UHF Transistor Ftau = 3.0 Gh- (typ) @ 300MHz, 14v, 90mA, G U max 2 = 11.5 dB (typ) @ 300 MHz, 14v, 90mA

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1002MA, D Microwave Pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc O

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10031, D The RF Line Microwave Long Pulse Power Transistor Designed for 960 1215 MH- long or short pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Wat