NE85600 가격 및 재고 조회

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E NE856 SERIES LOW NOISE FIGURE: 1.1 dB at 1 GH- HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION LOW COST 00 (CHIP) VCC = 10 V, IC 7 mA MSG 4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 1.0 0.4 0.5 1.

Philips Semiconductors Product specification Low-power coaxial Ethernet transceiver NE83C92 DESCRIPTION The NE83C92 is a low power BiCMOS coaxial transceiver interface (CTI) for Ethernet (10base5) and Thin Ethernet (10base2) local area networks. The CTI is connected between the coaxial cable and

Philips Semiconductors Product specification Low-power coaxial Ethernet transceiver NE83Q92 DESCRIPTION The NE83Q92 is a low power BiCMOS coaxial transceiver interface (CTI) for Ethernet (10base5) and Thin Ethernet (10base2) local area networks. The CTI is connected between the coaxial cable and

Philips Semiconductors Product specification Enhanced coaxial Ethernet transceiver NE83Q93 DESCRIPTION The NE83Q93 is a low power coaxial transceiver interface (CTI) for Ethernet (10base5) and Thin Ethernet (10base2) local area networks. The CTI is connected between the coaxial cable and the Dat

PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GH- to 10 GH- frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in �

PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GH- to 10 GH- frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in �