NTD18N06L 가격 및 재고 조회

NTD18N06L, NTDV18N06L Power MOSFET 18 A, 60 V, Logic Level N Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features AEC Q101 Qualified NTDV18N06L These Devices are Pb Free and are RoHS Complian

NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI Type No. Reverse V oltage PRV (V olts) Avg. Fwd.Current o at 50 C (mA) Max. Fwd. Voltage Drop at 25 C And I O V F (Volts) o Length L Fig.3 NTD 08

Naina Semiconductor Ltd. NTD106B Features Thyristor, Diode Module, 106A Improved glass passivation for high reliability Exceptional stability at high temperatures High di, dt and dv, dt capabilities Low thermal resistance Voltage Ratings (TA = 25oC, unless otherwise noted) Type number Vol

NTD110N02R Power MOSFET 24 V, 110 A, N Channel DPAK Features Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High Efficiency DC DC Converters Pb Free

NTD110N02R Power MOSFET 24 V, 110 A, N Channel DPAK Features Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High Efficiency DC DC Converters Pb Free

NTD110N02R Power MOSFET 24 V, 110 A, N Channel DPAK Features Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High Efficiency DC DC Converters Pb Free