P0165EI 가격 및 재고 조회

P0165EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 10.6Ω @VGS = 10V ID 1A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous

P010xx Sensitive standard SCRs up to 0.8 A Features ■ ■ ■ A IT(RMS) up to 0.8 A VDRM, VRRM100, 200, 400 and 600 V IGTfrom 5 to 200 A K G K A KA G Description Thanks to highly sensitive triggering levels, the P010xx SCR series is suitable for all applications where available gate current i

P010xx Sensitive standard SCRs up to 0.8 A Features ■ ■ ■ A IT(RMS) up to 0.8 A VDRM, VRRM100, 200, 400 and 600 V IGTfrom 5 to 200 A K G K A KA G Description Thanks to highly sensitive triggering levels, the P010xx SCR series is suitable for all applications where available gate current i

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P010xx Sensitive standard SCRs up to 0.8 A Features ■ ■ ■ A IT(RMS) up to 0.8 A VDRM, VRRM100, 200, 400 and 600 V IGTfrom 5 to 200 A K G K A KA G Description Thanks to highly sensitive triggering levels, the P010xx SCR series is suitable for all applications where available gate current i

P010xx Sensitive standard SCRs up to 0.8 A Features ■ ■ ■ A IT(RMS) up to 0.8 A VDRM, VRRM100, 200, 400 and 600 V IGTfrom 5 to 200 A K G K A KA G Description Thanks to highly sensitive triggering levels, the P010xx SCR series is suitable for all applications where available gate current i