P5NC70Z 가격 및 재고 조회

STP5NC70Z - STP5NC70ZFP STB5NC70Z - STB5NC70Z-1 N-CHANNEL 700V - 1.8Ω - 4.6A TO-220, FP, D²PAK, I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP5NC70Z, FP STB5NC70Z, -1 s s VDSS 700V 700V RDS(on) <2Ω <2Ω ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv, dt AND

FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state

STP5NA60 STP5NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA60 STP5NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 1.6 Ω < 1.6 Ω ID 5.3 A 3.4 A TYPICAL RDS(on) = 1.35 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o

( t : ) STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA80 STP5NA80FI VDSS 800 V 800 V RDS(on) < 2.4 Ω < 2.4 Ω ID 4.7 A 2.8 A s TYPICAL RDS(on) = 1.8 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100

( t : ) STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA80 STP5NA80FI s s s s s s s VDSS 800 V 800 V R DS(on) < 2.4 Ω < 2.4 Ω ID 4.7 A 2.8 A TYPICAL RDS(on) = 1.8 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA

® STP5NB100 STP5NB100FP N - CHANNEL 1000V - 2.4Ω - 5A - TO-220, TO-220FP PowerMESH™ MOSFET T YPE STP5NB100 STP5NB100F P ν ν ν ν ν V DSS 1000 V 1000 V R DS(on) < 2.7 Ω < 2.7 Ω ID 5 A 5 A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv, dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTR