PBSS5480X 가격 및 재고 조회

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat (BISS) transistor Product speci cation Supersedes data of 2004 Jun 8 2004 Nov 08 Philips Semiconductors Product speci cation 80 V, 4 A PNP low VCEsat (BISS) transistor FEATURES High hFE and low VCEsa

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCEsat NPN double transistor Product speci cation Supersedes data of 2001 Sep 13 2001 Nov 07 Philips Semiconductors Product speci cation 15 V low VCEsat NPN double transistor FEATURES 300 mW total power dissipation Very small 1.6

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PBSS2515YPN 15 V low VCE(sat) NPN, PNP transistor Product speci cation Supersedes data of 2002 May 08 2005 Jan 11 Philips Semiconductors Product speci cation 15 V low VCE(sat) NPN, PNP transistor FEATURES Low collector-emitter saturat

PBSS2540E 40 V, 500 mA NPN low VCEsat (BISS) transistor Rev. 01 4 May 2005 Product data sheet 1. Product pro le 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBS3540E. 1.2 Features s s s s s Low co

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2540F 40 V low VCEsat NPN transistor Product speci cation 2001 Oct 31 Philips Semiconductors Product speci cation 40 V low VCEsat NPN transistor FEATURES Low collector-emitter saturation voltage High current capability Improved thermal behaviour

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor Product speci cation 2003 Jul 22 Philips Semiconductors Product speci cation 40 V, 0.5 A NPN low VCEsat (BISS) transistor FEATURES Low collector-emitter saturation voltage VCEsa