RF1S40N10 가격 및 재고 조회

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of

RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approa

TELEDYNE RELAYS HIGH REPEATABILITY ULTRAMINIATURE CENTIGRID® RELAY BROADBAND DC TO RF SERIES DESIGNATION RF100 RF103 SERIES RELAY TYPE Repeatable, RF, Centigrid® relay Sensitive, repeatable, RF, Centigrid® relay INTERNAL CONSTRUCTION PERFORMANCE FEATURES The ultraminiature RF100 and RF103 r

RF Diodes 1series Fast recovery Diodes (Silicon Epitaxial Planar) RF 1 series zExternal dimensions (Unit : mm) CPD 1.5 5.5 2.3 0.5 zApplications High frequency rectification zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss 4) Standard package TO-220FN, CPD 5

Fast recovery diodes RF1001T2D Applications General rectification Dimensions (Unit : mm) 4.5±0.3 　　　 0.1 Structure 1.2 1.3 5.0±0.2 Features 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1

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RF1005TF6S | Fast Recovery Diodes | Discrete Semiconductors | ROHM CO., LTD. Page 1 of 1 Fast Recovery Diodes RF1005TF6S [ Product description ] ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction