RFDA4005 가격 및 재고 조회

RFDA4005 6-Bit, Digital Controlled Variable Gain Amplifier 50MH- to 4000MHz RFMD’s RFDA4005 is a digitally controlled variable gain amplifier featuring high linearity over the entire gain control range with noise figure less than 6dB in its maximum gain state. The gain of the 6-bit digital step at

SEMICONDUCTOR May 1997 RFD10P03L, RFD10P03LSM, RFP10P03L 10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET Features Description 10A, 30V rDS(ON) = 0.200Ω Temperature Compensating PSPICE Model PSPICE Thermal Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Te

RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 File Number 3515.2 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optim

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE Features JEDEC TO-252AA DRAIN (FLANGE) Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V -

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet July 1999 File Number 2407.4 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE Features JEDEC TO-252AA DRAIN (FLANGE) Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V -