RJK0204DPA의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
| RJK0204DPA Silicon N Channel Power MOS FET Preliminary Datasheet
RJK0204DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10
Apr 27, 2010
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10   Renesas Technology |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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RJK0206DPA Silicon N Channel Power MOS FET Preliminary Datasheet
RJK0206DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00
Apr 27, 2010
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 Renesas Technology  |
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RJK0208DPA Silicon N Channel Power MOS FET Preliminary Datasheet
RJK0208DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00
Apr 27, 2010
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m typ. (at VGS = 10 Renesas Technology |
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RJK0210DPA Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet
RJK0210DPA
Silicon N Channel Power MOS FET Power Switching
Features
Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1948-0021 Rev.0.21 Jul 02, Renesas Technology |
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RJK0211DPA Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet
RJK0211DPA
Silicon N Channel Power MOS FET Power Switching
Features
Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.8 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1949-0021 Rev.0.21 Jul 02, Renesas Technology |
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RJK0212DPA Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet
RJK0212DPA
Silicon N Channel Power MOS FET Power Switching
Features
Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1950-0011 Rev.0.11 Jul 02, 2 Renesas Technology |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |