RJP020N06의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
| RJP020N06 Drive Nch MOS FET
RJP020N06
Transistors
2.5V Drive Nch MOS FET
RJP020N06
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
MPT3
4.5 1.6
0.5
1.5
zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
(1)
(2)
(3)
1.0
2.5 4.0
0.4
0.4 1.5
0.5 1.5 3.0
0.4
zApplications Switc PDF 다운로드  ROHM Semiconductor |
| RJP020N06FRA Power MOSFET ( Transistor ) RJP020N06FRA
Nch 60V 2A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
60V 240mΩ
±2A 2W
lFeatures
1) Low on-resistance 2) Low voltage drive(2.5V drive) 3) AEC-Q101 Qualified
lOutline
SOT-89
MPT3
lInner circuit
Datasheet
lPackaging specifications Pack PDF 다운로드ROHM Semiconductor |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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RJP1CS03DWT IGBT Preliminary Datasheet
RJP1CS03DWT, RJP1CS03DWA
1250V - 30A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) High speed switching Short circuit withstands time (10 s min.) R07DS0826EJ0001 Rev.0.01 Jul 03  Renesas  |
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RJP1CS04DWA IGBT Preliminary Datasheet
RJP1CS04DWT, RJP1CS04DWA
1250V - 50A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) High speed switching Short circuit withstands time (10 s min.) R07DS0827EJ0004 Rev.0.04 Jun 05 Renesas |
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RJP1CS04DWT IGBT Preliminary Datasheet
RJP1CS04DWT, RJP1CS04DWA
1250V - 50A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) High speed switching Short circuit withstands time (10 s min.) R07DS0827EJ0004 Rev.0.04 Jun 05 Renesas |
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RJP1CS05DWA IGBT Preliminary Datasheet
RJP1CS05DWT, RJP1CS05DWA
1250V - 75A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25 C) High speed switching Short circuit withstands time (10 s min.) R07DS0828EJ0001 Rev.0.01 Jul 05 Renesas |
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RJP1CS05DWT IGBT Preliminary Datasheet
RJP1CS05DWT, RJP1CS05DWA
1250V - 75A - IGBT Application: Inverter
Features
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25 C) High speed switching Short circuit withstands time (10 s min.) R07DS0828EJ0001 Rev.0.01 Jul 05 Renesas |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |