RQK0202RGDQA의 가격 정보 및 구매처를 확인 할 수 있습니다.

이 페이지에서 반도체 부품에 대한 모든 관련 사양 및 성능 데이터가 포함된 데이터시트가 제공됩니다.


검색 결과 목록

RQK0202RGDQA

Silicon N-Channel MOS FET

RQK0202RGDQA Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 42 mΩ typ (VGS = 4.5 V, ID = 1.9 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “RG”. Preliminary D



RQK0202RGDQA PDF 데이터시트

Renesas
Renesas


 

국내 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ


관련 검색 목록

RQK0204TGDQA

Silicon N-Channel MOS FET

RQK0204TGDQA Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 100 mΩ typ (VGS = 4.5 V, ID = 1.2 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Note: Marking is “TG”. 1 2 Preliminar


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datasheet RQK0204TGDQA pdf


RQK0301FGDQS

Silicon N-Channel MOS FET

RQK0301FGDQS Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 28 mΩ typ (VGS = 10 V, ID = 3 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “FG”. REJ03G1269


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datasheet RQK0301FGDQS pdf


RQK0302GGDQA

Silicon N-Channel MOS FET

RQK0302GGDQA Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 92 mΩ typ (VGS = 10 V, ID = 1.3 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Note: Marking is “GG”. 1 2 Preliminary


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datasheet RQK0302GGDQA pdf


RQK0302GGDQS

Silicon N-Channel MOS FET

RQK0302GGDQS Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 81 mΩ typ (VGS = 10 V, ID = 1.9 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “GG”. REJ03G12


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datasheet RQK0302GGDQS pdf


RQK0601AGDQS

Silicon N-Channel MOS FET

RQK0601AGDQS Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 56 mΩ typ (VGS = 10 V, ID = 2.5 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “AG”. REJ03G05


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datasheet RQK0601AGDQS pdf



국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로
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