RU1088R 가격 및 재고 조회

RU1088R N-Channel Advanced Power MOSFET Features 100V, 80A RDS (ON)=10mΩ(Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv, dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested Lead Free and Green Available Applications ·Switching Application Systems Pin Descr

RU120N15R N-Channel Advanced Power MOSFET Features · 150V, 120A RDS (ON)=15mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·

RU12200R N-Channel Advanced Power MOSFET Features 120V, 200A, RDS (ON) =5.8mΩ(Typ.)@VGS=10V Reliable and Rugged Ultra Low On-Resistance 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Applications Uninterruptible Power Supplies Syn

RU140N10R N-Channel Advanced Power MOSFET Features 100V, 140A RDS (ON)=6.5mΩ(Typ.) @ VGS=10V Ultra Low On-Resistance Low Gate Charge Fast Switching and Fully Avalanche Rated 100% avalanche tested Applications ·Switching applications Pin Description TO-220 Absolute Maximum Ratings Symbol

RU16P8M4 P-Channel Advanced Power MOSFET Features -16V, -8A, RDS (ON) =40mΩ(Typ.)@VGS=-4.5V RDS (ON) =65mΩ(Typ.)@VGS=-2.5V Super High Dense Cell Design Fast Switching Speed Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Applications Load Swtich Battery Charge D

RF Module - Digital Module - RF Module - Digital Module ■ INTRODUCTION SAMSUNG Electro-mechanics has two kinds of Digital RF Modules ; 2.4GHz, DECT 2.4GH- RF Module is an unit product of RF part in SST phone. This RF unit transmits and receives with TDD(Time Division Duplexer), MCA(Multi Channel