S-L2980의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
S-L2980 High Ripple Rejection Low Dropout CMOS Voltage Regulator
High Ripple Rejection Low Dropout CMOS Voltage Regulator S-L2980 Series
2001 IC Marketing Group Seiko Instruments Inc.
Seiko Instruments Inc. , Components Headquarters
High Ripple Rejection Low Dropout CMOS Voltage Regulator S-L2980 Series Tentative specifications
Features 70 dB ![]() ![]() Seiko Instruments |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
S-L2N7002LT1G Small Signal MOSFET LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET 115 mAmps, 60 Volts
N Channel SOT 23
ESD Protected:1000V S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Ga ![]() Leshan Radio Company ![]() |
S-L2SA1365ELT1G General Purpose Transistor LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
●Excellent linearity of DC forw ![]() Leshan Radio Company ![]() |
S-L2SA1365ELT3G General Purpose Transistor LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
●Excellent linearity of DC forw ![]() Leshan Radio Company ![]() |
S-L2SA1365FLT1G General Purpose Transistor LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
●Excellent linearity of DC forw ![]() Leshan Radio Company ![]() |
S-L2SA1365FLT3G General Purpose Transistor LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
●Excellent linearity of DC forw ![]() Leshan Radio Company ![]() |
국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
검색결과에 표시되지 않는 내용은 수일내에 자동으로 업데이트 됩니다. 이 페이지에 대한 링크를 허용합니다. |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |