S9014 가격 및 재고 조회

SS9014 SS9014 Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO V

7 Semiconductor STS9014 NPN Silicon Transistor Description General purpose application Switching application Features Excellent hFE linearity : hFE(IC=0.1 mA) , hFE(IC=2 mA) = 0.95(Typ.) Low noise : NF=10dB(Max.) at f=1KH- Complementary pair with STS9015 Ordering Information Type NO. STS9

BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES - Collec tor Current.(IC= 30mA） - Power dissipation.(PC=200mW) Production specification S 9011 Pb Lead-free APPLICATIONS - AM converter, AM, FM if amplifier general purpose transistor. ORDERING INFORMATION Type No. S 9011

S9012 PNP General Purpose Transistors P b Lead(Pb)-Free TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA =25 C Junction Temperature Storage,

BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor FEATURES - - - High Collector Current.(IC= -500mA） Complementary To S9013. Excellent HFE Linearity. Production specification S9012 Pb Lead-free APPLICATIONS - High Collector Current. SOT-23 ORDERING INFORMATION Type No. S9012 Mar

Elektronische Bauelemente S9012 PNP Silicon General Purpose Transistor FEATURES RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Collector 33 Power dissipation PCM : 0.3 W Collector Current ICM : - 0.5 A Collector-base voltage V(BR)CBO : - 40 V Operating & storage junction t