SD1224-10의 가격 정보 및 구매처를 확인 할 수 있습니다. |
|
|
검색 결과 목록
| SD1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS SD1224-10
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
. . . . . .
30 MH- 28 VOLTS IMD 28 dB COMMON EMITTER GOLD METALLIZATION POUT = 30 W MIN. WITH 18 dB GAIN
.380 4LFL (M113) epoxy sealed ORDER CODE SD1224-10
DESCRIPTION
The SD1224-10 is a 28 V epitaxial silicon NPN planar transistor desig   ST Microelectronics |
| SD1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS w
w
.D w
t a
S a
e h
t e
U 4
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
 Microsemi Corporation |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
|
SD1003 1.0A Surface Mount Schottky Barrier Rectifier SD1002 THRU SD1006
1.0A Surface Mount Schottky Barrier Rectifier
Voltage Range 20 to 60 Volts 450m Watts Power Dissipation
Features
Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forwar  Taiwan Semiconductor  |
|
SD1003 Step-Down Converter SD1003
1200mA, 30V Synchronous Rectified Step-Down Converter
FEATURES
8V to 30V operating input range 1200mA output current Up to 92% efficiency High efficiency (>80%) at light load Internal Soft-Start 400kH- switching frequency CC, CV control mode Input under voltage lockout Input over v  ETC |
|
SD1004 1.0A Surface Mount Schottky Barrier Rectifier SD1002 THRU SD1006
1.0A Surface Mount Schottky Barrier Rectifier
Voltage Range 20 to 60 Volts 450m Watts Power Dissipation
Features
Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forwar Taiwan Semiconductor |
|
SD1006 1.0A Surface Mount Schottky Barrier Rectifier SD1002 THRU SD1006
1.0A Surface Mount Schottky Barrier Rectifier
Voltage Range 20 to 60 Volts 450m Watts Power Dissipation
Features
Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forwar Taiwan Semiconductor |
|
SD1006 NPN SILICON HIGH FREQUENCY TRANSISTOR SD1006
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
DESCRIPTION:
The ASI SD1006 is a High Frequency Transistor for General Purpose Amplifier Applications.
MAXIMUM RATINGS
IC VCEO VCBO PDISS TJ TSTG θJC 400 mA 30 V 50 V 3.5 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 50 �  Advanced Semiconductor |
|
국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
|
검색결과에 표시되지 않는 내용은 수일내에 자동으로 업데이트 됩니다. 이 페이지에 대한 링크를 허용합니다. |
|
DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |