SI1000의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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| SI1000 (SI Series) SNAP-IN MOUNT ALUMINUM ELECTROLYTIC SNAP IN MOUNT ALUMINUM ELECTROLYTIC
SI SERIES
SUBMINIATURE (SI: Snap in)
The SI Snap in series subminiature aluminum electrolytic capacitors are especially suitable for applications requiring high capacitance, low cost, and very small size. In fact, you’ll find these capacitors in some of the most   NTE Electronics |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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SI1011 (SI1010 - SI1015) Ultra Low Power ADC Si1010, 1, 2, 3, 4, 5
Ultra Low Power, 16, 8 kB, 12, 10-Bit ADC MCU with Integrated 240 960 MH- EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 A; retains state and RAM contents over full supply range; fast wakeup of < 2 s Less than 600 nA with R  Silicon Laboratories  |
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SI1012 (SI1010 - SI1015) Ultra Low Power ADC Si1010, 1, 2, 3, 4, 5
Ultra Low Power, 16, 8 kB, 12, 10-Bit ADC MCU with Integrated 240 960 MH- EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 A; retains state and RAM contents over full supply range; fast wakeup of < 2 s Less than 600 nA with R Silicon Laboratories |
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SI1012CR N-Channel 20 V (D-S) MOSFET
Si1012CR
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ( ) 0.396 at VGS = 4.5 V 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V ID (A) 0.5 0.2 0.2 0.75 Qg (Typ.)
FEATURES
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested  Vishay Siliconix |
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SI1012R N-Channel 1.8-V (G-S) MOSFET Si1012R, X
New Product
Vishay Siliconix
N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V
ID (mA)
600 500 350
FEATURES
D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Spe Vishay Siliconix |
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Si1012X N-Channel 1.8-V (G-S) MOSFET Si1012R, X
New Product
Vishay Siliconix
N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V
ID (mA)
600 500 350
FEATURES
D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Spe Vishay Siliconix |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |