SI106-101의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
| SI106-101 SMT Power Inductor SMT Power Inductor
SI106 Type
Features
Low profile (5.9mm max. height) SMD type. Unshielded. Self-leads, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter, DC-AC inverters inductor applic   ETC |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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SI1011 (SI1010 - SI1015) Ultra Low Power ADC Si1010, 1, 2, 3, 4, 5
Ultra Low Power, 16, 8 kB, 12, 10-Bit ADC MCU with Integrated 240 960 MH- EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 A; retains state and RAM contents over full supply range; fast wakeup of < 2 s Less than 600 nA with R  Silicon Laboratories  |
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SI1012 (SI1010 - SI1015) Ultra Low Power ADC Si1010, 1, 2, 3, 4, 5
Ultra Low Power, 16, 8 kB, 12, 10-Bit ADC MCU with Integrated 240 960 MH- EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 A; retains state and RAM contents over full supply range; fast wakeup of < 2 s Less than 600 nA with R Silicon Laboratories |
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SI1012CR N-Channel 20 V (D-S) MOSFET
Si1012CR
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ( ) 0.396 at VGS = 4.5 V 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V ID (A) 0.5 0.2 0.2 0.75 Qg (Typ.)
FEATURES
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested  Vishay Siliconix |
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SI1012R N-Channel 1.8-V (G-S) MOSFET Si1012R, X
New Product
Vishay Siliconix
N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V
ID (mA)
600 500 350
FEATURES
D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Spe Vishay Siliconix |
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Si1012X N-Channel 1.8-V (G-S) MOSFET Si1012R, X
New Product
Vishay Siliconix
N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V
ID (mA)
600 500 350
FEATURES
D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Spe Vishay Siliconix |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |