SLD50R290SJ 가격 및 재고 조회

SLB, D, F, I, P , U50R290SJ General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr

1310nm Laser Diode Chips 1310nm Laser Diode Chips SLD-1310-P5-C-05 SLD-1310-P5-C-05 UNION OPTRONICS CORP. ■Specifications (1) Size : (2) Device: (3) Structure: 300*300*100μm Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit :μm) 300μm 100μm Wavegu

Product Description Sirenza Microdevices’ SLD2000 is a robust 12 Watt, high performance LDMOS transistor die, designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD2000 is typically used as a driver or output stage f

SLD-2083CZ Product Description Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high performance LDMOS transistor designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD-2083CZ is typically used in the desig

Preliminary SLD-3091FZ Product Description Sirenza Microdevices’ SLD-3091FZ is a robust 30 Watt high performance LDMOS transistor designed for operation from 10 to 2200MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD-3091FZ is typica

635nm Laser Diode 635nm Red Laser Diode SLD-635-P5-RG-466-1 ■Specifications (1) Device: (2) Structure: Laser Diode TO-18(φ5.6mm) ■External dimensions(Unit : mm) SLD-635-P5-RG-466-1 UNION OPTRONICS CORP. ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbol Optical Output Po Reverse