SPN7510의 가격 정보 및 구매처를 확인 할 수 있습니다.

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SPN7510

N-Channel Enhancement Mode MOSFET

SPN7510 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7510 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are



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SPN7510 PDF 데이터시트

SYNC POWER
SYNC POWER


국내 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ


관련 검색 목록

SPN02N60S5

Power Transistor

SPN02N60S5 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv, dt rated Ultra VDS RDS(on) ID 600 3 0.4 SOT-223 4 V Ω A low effective capacitances Improved transconductance 2 1 3 VPS05163 Type SPN02N60S5 Package SOT-223 Or


Infineon Technologies
Infineon Technologies

datasheet SPN02N60S5 pdf


SPN03N60C3

Cool MOS Power Transistor

Rev. 2.0 SPN03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 0.7 SOT-223 4 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv, dt rated Ultra low effective capacitances V Ω A 3 2 1 VPS05163 Type Package Ordering Code SPN03N60C3 SOT-22


Infineon Technologies
Infineon Technologies

datasheet SPN03N60C3 pdf


SPN03N60S5

Cool MOS Power Transistor

SPN03N60S5 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv, dt rated Ultra low effective capacitances Improved transconductance 2 1 VPS05163 VDS RDS(on) ID 600 1.4 0.7 SOT-223 4 V Ω A 3 Type SPN03N60S5 Package SOT-223 Orde


Infineon Technologies
Infineon Technologies

datasheet SPN03N60S5 pdf


SPN04N60C2

Cool MOS Power Transistor

Final data SPN04N60C2 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in SOT 223 Product Summary VDS RDS(on) ID 600 0.95 0.8 SOT-223 4 V Ω A Ultra low gate charge Extreme dv, dt rated Ultra low effective capacitances Improved noise i


Infineon
Infineon

datasheet SPN04N60C2 pdf


SPN04N60S5

Cool MOS Power Transistor

SPN04N60S5 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in SOT 223 VDS RDS(on) ID 600 0.95 0.8 SOT-223 4 V Ω A Ultra low gate charge Extreme dv, dt rated Ultra low effective capacitances Improved transconductance 3 2 1 VPS05163 T


Infineon
Infineon

datasheet SPN04N60S5 pdf



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