SPN8878 가격 및 재고 조회

SPN8878 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878 has been designed specifically to improve the overall efficiency of DC, DC converters us

SPN8878B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878B has been designed specifically to improve the overall efficiency of DC, DC converters

SPN02N60S5 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv, dt rated Ultra VDS RDS(on) ID 600 3 0.4 SOT-223 4 V Ω A low effective capacitances Improved transconductance 2 1 3 VPS05163 Type SPN02N60S5 Package SOT-223 Or

Rev. 2.0 SPN03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 0.7 SOT-223 4 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv, dt rated Ultra low effective capacitances V Ω A 3 2 1 VPS05163 Type Package Ordering Code SPN03N60C3 SOT-22

SPN03N60S5 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv, dt rated Ultra low effective capacitances Improved transconductance 2 1 VPS05163 VDS RDS(on) ID 600 1.4 0.7 SOT-223 4 V Ω A 3 Type SPN03N60S5 Package SOT-223 Orde

Final data SPN04N60C2 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in SOT 223 Product Summary VDS RDS(on) ID 600 0.95 0.8 SOT-223 4 V Ω A Ultra low gate charge Extreme dv, dt rated Ultra low effective capacitances Improved noise i

SPN04N60S5 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in SOT 223 VDS RDS(on) ID 600 0.95 0.8 SOT-223 4 V Ω A Ultra low gate charge Extreme dv, dt rated Ultra low effective capacitances Improved transconductance 3 2 1 VPS05163 T