SPP2305의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
SPP2305 P-Channel Enhancement Mode MOSFET SPP2305
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are PDF 다운로드SYNC POWER |
SPP2305D P-Channel Enhancement Mode MOSFET SPP2305D
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP2305D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar PDF 다운로드SYNC POWER |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
SPP02N60C3 Cool MOS Power Transistor
Final data
SPP02N60C3 SPB02N60C3
VDS @ Tjmax RDS(on) ID
P-TO263-3-2
Cool MOS™ Power Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances
650 3 1.8
V Ω A
P-TO220-3-1
Type SPP0 Infineon Technologies |
SPP02N60S5 Cool MOS Power Transistor
SPP02N60S5 SPB02N60S5 Cool MOS™ Power Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances Improved transconductance
P-TO220-3-1
VDS RDS(on) ID
P-TO263-3-2
600 3 1.8
V Ω A
P-T Infineon Technologies |
SPP02N80C3 Cool MOS Power Transistor
Final data
SPP02N80C3 SPA02N80C3
VDS RDS(on) ID
P-TO220-3-31
Cool MOS™ Power Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31
800 2.7 2
Infineon Technologies |
SPP03N60C3 Cool MOS Power Transistor Final data
SPP03N60C3, SPB03N60C3 SPA03N60C3
VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A
Cool MOS™ Power Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated High peak current capability Improved transconductance
P- Infineon Technologies |
SPP03N60S5 Power Transistor Cool MOS™ Power Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances Improved transconductance
SPP03N60S5
VDS RDS(on)
ID
600 V 1.4 Ω 3.2 A
PG-TO220
2
P-TO220-3-1
123
Type SPP Infineon Technologies |
국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |