SPP47N10 가격 및 재고 조회

Preliminary data SPI47N10 SPP47N10,SPB47N10 Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv, dt rated 100 33 47 P-TO220-3-1 V m
A Type SPP47N10 SPB47N10 SPI47N10 Pac

Preliminary data SPI47N10L SPP47N10L,SPB47N10L Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv, dt rated 100 26 47 P-TO220-3-1 V m
A Type SPP47N10L SPB4

Final data SPP02N60C3 SPB02N60C3 VDS @ Tjmax RDS(on) ID P-TO263-3-2 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances 650 3 1.8 V Ω A P-TO220-3-1 Type SPP0

SPP02N60S5 SPB02N60S5 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances Improved transconductance P-TO220-3-1 VDS RDS(on) ID P-TO263-3-2 600 3 1.8 V Ω A P-T

Final data SPP02N80C3 SPA02N80C3 VDS RDS(on) ID P-TO220-3-31 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 800 2.7 2

Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated High peak current capability Improved transconductance P-

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances Improved transconductance SPP03N60S5 VDS RDS(on) ID 600 V 1.4 Ω 3.2 A PG-TO220 2 P-TO220-3-1 123 Type SPP