SSE04N65SL 가격 및 재고 조회

SSE04N65SL Elektronische Bauelemente 4A , 650V , RDS(ON) 2.7Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE04N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RD

Elektronische Bauelemente SSE08N60SL 8A , 600V , RDS(ON) 1.2Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE08N60SL is an N-channel enhancement mode power MOS field effect transistor which is produced. The improved plana

SSE110N03-03P Elektronische Bauelemente 110A , 30V , RDS(ON) 2.5mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide low RDS(on) and

SSE12N65SL Elektronische Bauelemente 12A , 650V , RDS(ON) 0.8Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSE12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R

SSE4N60 Elektronische Bauelemente 4.1A, 600 V, RDS(ON) 2.5 Ω N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability