SUB15P01-52 가격 및 재고 조회

SUP, SUB15P01-52 Vishay Siliconix P-Channel 8-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.052 @ VGS = 4.5 V 8 0.070 @ VGS = 2.5 V 0.105 @ VGS = 1.8 V ID (A) 15 10 10.5 TO-220AB S TO-263 G DRAIN connected to TAB G G D S Top View SUP15P01-52 SUB15P01-52 P-Channel MOSFET

SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.013 @ VGS = 10 V 0.02 @ VGS = 4.5 V ID (A) 45a 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L N-Channel MOSFET

SUP, SUB60N06-18 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.018 ID (A) 60 TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View SUP60N06-18 G D S S Top View SUB60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLE

Semiconductor SUB610 Schottky Barrier Diode Features Small SMD package & 3chip array Low reverse current: IR=1 ㎂ Max. @ VR=30V Low power rectified High reliability Ordering Information Type No. SUB610 Marking 61B Package Code SOT-363 Outline Dimensions unit : mm 1.95~2.25 0.65 Typ. 1.15~

SUP, SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 40 0.023 @ VGS = 4.5 V 50 rDS(on) (W) 0.015 @ VGS = 10 V ID (A) 65 TO-220AB S TO-263 G DRAIN connected to TAB G G D S Top View SUP65P04-15 SUB65P04-15 P-Channel MOSFET D S Top View

SUP, SUB65P06-20 Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.020 ID (A) 65a TO-220AB S TO-263 G DRAIN connected to TAB G D S Top View SUP65P06-20 G D S D Top View SUB65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLE