TK11121SIL의 가격 정보 및 구매처를 확인 할 수 있습니다. |
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검색 결과 목록
| TK11121SIL VOLTAGE REGULATOR WITH ON/OFF SWITCH TK111xxS
VOLTAGE REGULATOR WITH ON, OFF SWITCH FEATURES
s s s s s s s s s High Voltage Precision at ± 2.0% or ± 60 mV Active High On, Off Control Very Low Dropout Voltage (85 mV at 30 mA) Very Low Noise Miniature Package (SOT-23-5) Internal Thermal Shutdown Short Circuit Protection Excellent Rippl   TOKO |
국내 전자부품 판매점 |
디바이스마트 IC114 엘레파츠 ICbanQ |
관련 검색 목록
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TK100A10N1 MOSFETs Silicon N-channel MOS TK100A10N1
MOSFETs Silicon N-channel MOS (U-MOS -H)
TK100A10N1
1. Applications
Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VD  Toshiba  |
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TK100E06N1 MOSFETs TK100E06N1
MOSFETs Silicon N-channel MOS (U-MOS -H)
TK100E06N1
1. Applications
Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS  Toshiba Semiconductor |
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TK100E08N1 MOSFETs TK100E08N1
MOSFETs Silicon N-channel MOS (U-MOS -H)
TK100E08N1
1. Applications
Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS Toshiba Semiconductor |
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TK100E10N1 MOSFETs TK100E10N1
MOSFETs Silicon N-channel MOS (U-MOS -H)
TK100E10N1
1. Applications
Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VD Toshiba Semiconductor |
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TK100F04K3 Field Effect Transistor TK100F04K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK100F04K3
Swiching Regulator, DC-DC Converter Applications Motor Drive Applications
Unit: mm High forward transfer admittance: |Yfs| = 174 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement-m Toshiba |
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국내 및 해외 전자부품 구매 정보 및 가격정보를 쉽게 확인 할수 있습니다. 부품 번호 및 기타 주요 기준별로 결과를 필터링하여 필요한 정확한 데이터시트를 쉽게 찾을 수 있습니다. |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 신규 | 맵 : 1, 2 |