VT1000 가격 및 재고 조회

w w SMALL SIZE MOLDED PACKAGE PRV 10,000 TO 15,000 VOLTS FAST RECOVERY (R_SERIES) AVALANCHE CHARACTERISTICS LOW LEAKAGE a D . w S a t e e h U 4 t m o .c VT RVT HIGH VOLTAGE 50 mA SILICON RECTIFIERS EDI Type VT1000 VT1200 VT1500 RVT1000 RVT1200 RVT1500 PRV Volts 10,000 12,000 15,000 10,000

Section I - Vibration Sensors Piezo Electric Velocity Accelerometers VT102 Series Dual Output, Piezo Electric Velocity Sensor, Velocity, Temperature, Top Exit Connector, Cable, 100 mV, in, sec, 10 mV, °C Actual Product Size Shown Product Features Velocity and Temperature Output in One Sensor Hig

Section I - Vibration Sensors Piezo Electric Velocity Accelerometers VT102 Series Dual Output, Piezo Electric Velocity Sensor, Velocity, Temperature, Top Exit Connector, Cable, 100 mV, in, sec, 10 mV, °C Actual Product Size Shown Product Features Velocity and Temperature Output in One Sensor Hig

New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AB TMBS ® FEATURES ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operati

VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TO-220AB TMBS ® ITO-220AB VT10200C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT10200C 123 PIN 1 PIN 2 PIN 3

www.vishay.com VT10200C-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TMBS ® TO-220AB FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JE