W11NK100Z 가격 및 재고 조회

STW11NK100Z N-CHANNEL 1000V - 1.1Ω - 8.3A TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230 W s TYPICAL RDS(on) = 1.1 Ω s EXTREMELY HIGH dv, dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPA

Date:- 4th March, 2014 Data Sheet Issue:- 3 Rectifier Diode Types W1185LC300 to W1185LC450 Previous Type No.: SW38-45CXC515 Absolute Maximum Ratings VRRM VRSM VOLTAGE RATINGS Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1) MAXIMUM LIMITS 3000-4500 3100-46

Date:- 4th March, 2014 Data Sheet Issue:- 3 Rectifier Diode Types W1185LC300 to W1185LC450 Previous Type No.: SW38-45CXC515 Absolute Maximum Ratings VRRM VRSM VOLTAGE RATINGS Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1) MAXIMUM LIMITS 3000-4500 3100-46

® STW11NB80 N-CHANNEL 800V - 0.65Ω - 11A - T0-247 PowerMESH™ MOSFET TYPE STW 11NB80 s s s s s s V DSS 800 V R DS(on) < 0.8 Ω ID 11 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv, dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GAT

STW11NK100Z N-CHANNEL 1000V - 1.1Ω - 8.3A TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230 W s TYPICAL RDS(on) = 1.1 Ω s EXTREMELY HIGH dv, dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPA

STW11NK90Z N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STW11NK90Z ■ ■ ■ ■ ■ VDSS 900V RDS(on) <0.98Ω ID 9.2A Pw 200W 100% avalanche tested Extremely high dv, dt capability Gate charge minimized Very low intrinsic capacitan