XL1225 가격 및 재고 조회

XL1225 Rev.E Mar.-2016 描述 , Descriptions TO-92 塑封封 向可控硅。Thyristor in a TO-92 Plastic Package. 特征 , Features 低成本，高容量。 Intended for low cost high volume applications. 用途 , Applications 用于高 控制 路。 Applied to high Voltage control circuit.

UNISONIC TECHNOLOGIES CO.,LTD. XL, ML1225 MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The XL1225, ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. SCR ORDERING INFORMATION Ordering Number

20.0-36.0 GH- GaAs MMIC Low Noise Amplifier March 2005 - Rev 01-Mar-05 L1002 Chip Device Layout Features Balanced Design Excellent Input, Output Match Self-biased Architecture 23.0 dB Small Signal Gain 2.6 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MI

XL1002-BD Low Noise Amplifier 20.0-36.0 GHz Features Balanced Design Excellent Input, Output Match Self-biased Architecture 23.0 dB Small Signal Gain 2.6 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 RoHS* Compliant and 260°C

24.0-40.0 GH- GaAs MMIC Low Noise Amplifier May 2006 - Rev 10-May-06 L1003 Chip Device Layout Features Balanced Output Stage Excellent Input, Output Match Self-biased Architecture 24.0 dB Small Signal Gain 1.7 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection t

35.0-45.0 GH- GaAs MMIC Low Noise Amplifier May 2006 - Rev 10-May-06 L1004 Chip Device Layout Features Balanced Design Excellent Input, Output Match Self-biased Architecture 17.0 dB Small Signal Gain 1.8 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-

5.0-20.0 GH- GaAs MMIC Low Noise Amplifier May 2006 - Rev 10-May-06 L1005 Chip Device Layout Features Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mi