XP1013-BD 가격 및 재고 조회

17.0-26.0 GH- GaAs MMIC Power Amplifier August 2007 - Rev 08-Aug-07 Features Excellent Saturated Output Stage Competitive RF, DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

27.0-35.0 GH- GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1003 Chip Device Layout Features Balanced Design Provides Good Input, Output Match On-Chip Temperature Compensated Output Power Detector 15.0 dB Small Signal Gain +34.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Outpu

27.0-35.0 GH- GaAs MMIC Power Amplifier April 2007 - Rev 02-Apr-07 P1003-BD Features Balanced Design Provides Good Input, Output Match On-Chip Temperature Compensated Output Power Detector 15.0 dB Small Signal Gain +34.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testin

35.0-43.0 GH- GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1005 Chip Device Layout Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspec

XP1005-BD Power Amplifier 35.0-43.0 GHz Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method

8.5-11.0 GH- GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD