XX1001-BD 가격 및 재고 조회

18.0-21.0, 36.0-42.0 GH- GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing 100% Visual Ins

18.0-21.0, 36.0-42.0 GH- GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing 100% Visual Ins

18.0-21.0, 36.0-42.0 GH- Doubler and Power Amplifier, QFN, 7x7mm October 2006 - Rev 04-Oct-06 X1001-QK Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression General Description Mimix Broadband's 18.0-21.0, 36.0-42.0

2.5-6.0, 5.0-12.0 GH- GaAs MMIC Active Doubler December 2005 - Rev 08-Dec-05 X1002 Chip Device Layout Features Compact, Low-Cost Design Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 100% On-Wafer RF, DC and Output Power Testing 100% Visual Ins

2.5-6.0, 5.0-12.0 GH- Active Doubler QFN, 4x4 mm March 2007 - Rev 15-Mar-07 X1002-QH Features Octave Bandwidth Operation +17 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply SMD, 4x4 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix

14.0-17.0, 28.0-34.0 GH- Active Doubler QFN, 5x5mm January 2007 - Rev 22-Jan-07 X1003-QC Features Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Power 35.0 dBc Fundamental Suppression RoHS Compliant 100% On-Wafer RF, DC and Output Power Testing General Descri