UPG2253T6S 가격 및 재고 조회

GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX, Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts. This device

2-8 GH- WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES WIDE-BAND: 2 to 8 GH- HIGH GAIN: 15 dB at f = 2 to 8 GH- MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GH- INPUT, OUTPUT IMPEDANCE MATCHED TO 50 Ω HERMETICALLY SEALED PACKAGE ASSURES HIGH Gain, GP (dB) GAIN vs. FREQUENCY AND TEMPERATURE 20

DATA SHEET GaAs INTEGRATED CIRCUIT PG110P 2 to 8 GH- WIDE BAND AMPLIFIER CHIP DESCRIPTION The PG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And the device is available in chip form. The PG110P is suitable for the gain stage required high gain

DATA SHEET GaAs INTEGRATED CIRCUIT PG133G L-BAND SPDT SWITCH DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MH- to 2.5 GHz, having the low insertion loss

DATA SHEET GaAs INTEGRATED CIRCUIT PG133G L-BAND SPDT SWITCH DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MH- to 2.5 GHz, having the low insertion loss

DATA SHEET GaAs INTEGRATED CIRCUIT PG133G L-BAND SPDT SWITCH DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MH- to 2.5 GHz, having the low insertion loss