07N60S5 데이터시트 PDF ( Data sheet )

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances Improved transconductance SPP07N60S5 SPI07N60S5 VDS RDS(on) ID 600 V 0.6 Ω

IPP07N03LB G OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC1) for target application N-channel - Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operat

Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge VDS @ Tjmax RDS(on) ID 650 0.6 7.3 V Ω A Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 Extreme dv, dt rated 2 High peak current capability