08N50E 데이터시트 PDF ( Data sheet )

FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv, dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI P

FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv, dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI P

Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP08N60 SDF08N60 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 600V 8A 0.89 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES T

CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv, dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances Product Summary V