1N5195 데이터시트 PDF ( Data sheet )

AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500, 118 GENERAL PURPOSE SILICON DIODES METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA, °C From 25°C to 150°C 1.0 mA, °C From 1

AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500, 118 GENERAL PURPOSE SILICON DIODES METALLURGICALLY BONDED 1N5194 1N5195 1N5196 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA, °C From 25°C to 150

LL-35 High Voltage , Current Use Advantages 1N5194UR thru 1N5196UR Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic. Ideal for use

1N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resis