20N06 데이터시트 PDF ( Data sheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching applications in pow

NTD20N06 Power MOSFET 20 Amps, 60 Volts, N Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Pb Free Packages are Available Lower RDS(on) Lower VDS(on) Lower Capacitances Lowe

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL, D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation mode

IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A Logic Level Low On-Resistance RDS(on) Excellent Gate Charge x R DS(on) product (FOM) Superior thermal resistance 175°C operating temperatu

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching applications in pow