20N50 데이터시트 PDF ( Data sheet )

N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer powe

UNISONIC TECHNOLOGIES CO., LTD 20N50 20A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low leakage current, etc. The UTC 20N50 is suitable for

SEMICONDUCTOR 20N50 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (20A, 500Volts) DESCRIPTION The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching speed, low on-state resistance, breakdown voltage rating of 500V, and max. th

FDP20N50 500V N-Channel MOSFET May 2006 FDP20N50 500V N-Channel MOSFET Features 20A, 500V, RDS(on) = 0.23Ω @VGS = 10 V Low gate charge ( typical 45.6 nC) Low Crss ( typical 27 pF) Fast switching 100% avalanche tested Improved dv, dt capability UniFET Description TM These N-Channel enha

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL, D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation mode

IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A Logic Level Low On-Resistance RDS(on) Excellent Gate Charge x R DS(on) product (FOM) Superior thermal resistance 175°C operating temperatu

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching applications in pow