3DD1555P 데이터시트 PDF ( Data sheet )

低 放大管 定的 型晶 管 CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555P FOR LOW FREQUENCY R 3DD1555P 主要 MAIN CHARACTERISTICS 封 Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1500 V 5A 3 V(max) 1 μs(max) 用途 ● 彩色 机行 出 路 APPLICATIONS ● Horizontal deflection output

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent th

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.