B600 데이터시트 PDF ( Data sheet )

SavantIC Semiconductor wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors Product Specification 2SB600 DESCRIPTION ·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emit

SavantIC Semiconductor wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors Product Specification 2SB600 DESCRIPTION ·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emit

DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES High-DC current gain due to Darlington connection Low collector saturation voltage Low collector cutoff current Ideal for u

N-Channel 60-V (D-S) MOSFET B6010D General Description The B6010D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are