GBC846 데이터시트 PDF ( Data sheet )

GBC846 Description Package Dimensions 1, 2 NPN EPITAXIAL PLANAR TRANSISTOR The GBC846 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0

ISSUED DATE :2005, 03, 25 REVISED DATE :2005, 10, 21B GBC327 Description Features PNP SILICON TRANSISTOR The GBC327 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 100~630 @VCE=-1V, IC=-100mA Complementary to GBC337 D Package Dimensions E S1 TO-92 A S E A

ISSUED DATE :2005, 10, 21 REVISED DATE : GBC328 Description Features PNP SILICON TRANSISTOR The GBC328 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 100~630 @VCE=-1V, IC=-100mA Complementary to GBC338 D Package Dimensions E S1 TO-92 A S E A T IN G PLANE

ISSUED DATE :2005, 10, 21 REVISED DATE : GBC337 Description Features NPN SILICON TRANSISTOR The GBC337 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 100~630 @VCE=1V, IC=100mA Complementary to GBC327 D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b